Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
171-2408
Mfr. Part No.:
SSM6N35FE
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

±10 V

Length

1.2mm

Width

1.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Height

0.55mm

COO (Country of Origin):
TH
1.2-V drive
N-ch 2-in-1
Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V)
Ron = 8 Ω (max) (@VGS = 1.5 V)
Ron = 4 Ω (max) (@VGS = 2.5 V)
Ron = 3 Ω (max) (@VGS = 4.0 V)

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