Toshiba N-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F SSM3K324R
- RS Stock No.:
- 171-2397
- Mfr. Part No.:
- SSM3K324R
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 reel of 3000 units)*
£285.00
(exc. VAT)
£342.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.095 | £285.00 |
| 6000 - 6000 | £0.09 | £270.00 |
| 9000 + | £0.085 | £255.00 |
*price indicative
- RS Stock No.:
- 171-2397
- Mfr. Part No.:
- SSM3K324R
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23F | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 109 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Length | 2.9mm | |
| Width | 1.8mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 2.2 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.7mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23F | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 109 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Length 2.9mm | ||
Width 1.8mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 2.2 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.7mm | ||
- COO (Country of Origin):
- TH
Power Management Switches
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)