Toshiba N-Channel MOSFET, 400 mA, 30 V, 3-Pin SOT-323 SSM3K09FU
- RS Stock No.:
- 171-2396
- Mfr. Part No.:
- SSM3K09FU
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-2396
- Mfr. Part No.:
- SSM3K09FU
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 400 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.7 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 150 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.25mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 400 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.7 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 2mm | ||
Maximum Operating Temperature +150 °C | ||
Length 1.25mm | ||
Number of Elements per Chip 1 | ||
Height 0.9mm | ||
- COO (Country of Origin):
- TH
Power Management Switches
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)
DC-DC Converters
1.8-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V)