Toshiba N-Channel MOSFET, 63 A, 30 V, 8-Pin TSON TPN4R303NL
- RS Stock No.:
- 171-2365
- Mfr. Part No.:
- TPN4R303NL
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2365
- Mfr. Part No.:
- TPN4R303NL
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 63 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 14.8 nC @ 10 V | |
| Length | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.85mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 14.8 nC @ 10 V | ||
Length 3.1mm | ||
Number of Elements per Chip 1 | ||
Width 3.1mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.85mm | ||
RoHS Status: Exempt
High-Efficiency DC-DC Converters
Switching Voltage Regulators
High-speed switching
Small gate charge: QSW = 3.9 nC (typ.)
Low drain-source on-resistance: RDS(ON= 5.1 mΩ (typ.(VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max(VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
Switching Voltage Regulators
High-speed switching
Small gate charge: QSW = 3.9 nC (typ.)
Low drain-source on-resistance: RDS(ON= 5.1 mΩ (typ.(VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max(VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)