Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD068N10N3GATMA1

RS Stock No.:: 171-1939P
Mfr. Part No.:: IPD068N10N3GATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD068N10N3GATMA1

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£71.50

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Units	Per unit
100 - 240	£0.715
250 - 490	£0.696
500 - 990	£0.678
1000 +	£0.661

*price indicative

RS Stock No.:: 171-1939P
Mfr. Part No.:: IPD068N10N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	100 V
	Series	OptiMOS™ 3
	Package Type	TO-252
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	12.3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Typical Gate Charge @ Vgs	51 nC @ 10 V
	Number of Elements per Chip	1
	Width	7.47mm
	Height	2.41mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 100 V
	Series OptiMOS™ 3
	Package Type TO-252
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 12.3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Typical Gate Charge @ Vgs 51 nC @ 10 V
	Number of Elements per Chip 1
	Width 7.47mm
	Height 2.41mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon MOSFET

The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Easy to design products
• Environmentally friendly
• Excellent gate charge x RDS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Increased efficiency
• Lead (Pb) free plating
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)

Applications

• Class D audio amplifiers
• Isolated DC-DC converters (telecom and data communication systems
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.