Infineon IRF7807ZPbF N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7807ZTRPBF
- RS Stock No.:
- 171-1911
- Mfr. Part No.:
- IRF7807ZTRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 171-1911
- Mfr. Part No.:
- IRF7807ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | IRF7807ZPbF | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 18.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.25V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 7.2 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Typical Power Gain | 0 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Series IRF7807ZPbF | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 18.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.25V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 7.2 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Typical Power Gain 0 | ||
The Infineon IRF7807Z is the 30V single N-channel HEXFET power MOSFET in a SO-8 Package.
Industry leading quality
Low RDS(ON) at 4.5V VGS
Fully characterized avalanche voltage and current
Ultra low gate impedance
Low RDS(ON) at 4.5V VGS
Fully characterized avalanche voltage and current
Ultra low gate impedance
