Infineon IRFR5305PBF P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRLPBF
- RS Stock No.:
- 171-1909P
- Mfr. Part No.:
- IRFR5305TRLPBF
- Brand:
- Infineon
Save 19% when you buy 1000 units
Subtotal 100 units (supplied on a continuous strip)*
£46.80
(exc. VAT)
£56.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 180 | £0.468 |
| 200 - 480 | £0.438 |
| 500 - 980 | £0.408 |
| 1000 + | £0.378 |
*price indicative
- RS Stock No.:
- 171-1909P
- Mfr. Part No.:
- IRFR5305TRLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | IRFR5305PBF | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 7.49mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Typical Power Gain | 0 | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series IRFR5305PBF | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 7.49mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Typical Power Gain 0 | ||
Forward Diode Voltage 1.3V | ||
