MagnaChip N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220F MMF60R190PTH
- RS Stock No.:
- 170-3040
- Mfr. Part No.:
- MMF60R190PTH
- Brand:
- MagnaChip
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 170-3040
- Mfr. Part No.:
- MMF60R190PTH
- Brand:
- MagnaChip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | MagnaChip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.93mm | |
| Length | 10.71mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.13mm | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand MagnaChip | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.93mm | ||
Length 10.71mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16.13mm | ||
Forward Diode Voltage 1.4V | ||
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip