N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
170-2335
Mfr. Part No.:
IPD50N10S3L16ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3 + 2 Tab

Maximum Drain Source Resistance

19.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

7.22mm

Minimum Operating Temperature

-55 °C

Series

IPD50N10S3L-16

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Summary of Features:
N-channel - Enhancement mode
175°C operating temperature
Green product
Benefits:
highest current capability 180A
low switching and conduction power losses for high thermal efficiency
robust packages with superior quality and reliability
optimized total gate charge enables smaller driver output stages
Target Applications:
48V inverter
48V DC/DC
HID lighting