Infineon IPB180N10S4-02 N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK IPB180N10S402ATMA1
- RS Stock No.:
- 170-2286
- Mfr. Part No.:
- IPB180N10S402ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)*
£3,388.00
(exc. VAT)
£4,066.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | £3.388 | £3,388.00 |
| 2000 + | £3.303 | £3,303.00 |
*price indicative
- RS Stock No.:
- 170-2286
- Mfr. Part No.:
- IPB180N10S402ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-263 | |
| Series | IPB180N10S4-02 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 + Tab | |
| Maximum Drain Source Resistance | 2.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V | |
| Length | 10mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 10.25mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-263 | ||
Series IPB180N10S4-02 | ||
Mounting Type Surface Mount | ||
Pin Count 7 + Tab | ||
Maximum Drain Source Resistance 2.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 156 nC @ 10 V | ||
Length 10mm | ||
Maximum Operating Temperature +175 °C | ||
Width 10.25mm | ||
Forward Diode Voltage 1.2V | ||
Height 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
The Infineon IPB180N10S4-02 is the 100V, N-channel automotive MOSFET. The package type of the device is the D2PAK 7pin and 175°C operating temperature.
N-channel enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
AEC qualified
MSL1 up to 260°C peak reflow
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