N-Channel MOSFET, 50 A, 600 V, 3-Pin TO 247 Infineon IPW60R040C7XKSA1
- RS Stock No.:
- 170-2279
- Mfr. Part No.:
- IPW60R040C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£299.97
(exc. VAT)
£359.97
(inc. VAT)
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | £9.999 | £299.97 |
| 150 - 270 | £8.725 | £261.75 |
| 300 + | £8.507 | £255.21 |
*price indicative
- RS Stock No.:
- 170-2279
- Mfr. Part No.:
- IPW60R040C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO 247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 227 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.13mm | |
| Typical Gate Charge @ Vgs | 107 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.21mm | |
| Forward Diode Voltage | 0.9V | |
| Series | IPW60R040C7 | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO 247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 227 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 107 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 5.21mm | ||
Forward Diode Voltage 0.9V | ||
Series IPW60R040C7 | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
The new 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series from Infineon offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. Efficiency and TCO (total cost of ownership) applications such as hyper data centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS ™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS ™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode