N-Channel MOSFET, 50 A, 600 V, 3-Pin TO 247 Infineon IPW60R040C7XKSA1

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RS Stock No.:
170-2279
Mfr. Part No.:
IPW60R040C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

600 V

Package Type

TO 247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

16.13mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

107 nC @ 10 V

Width

5.21mm

Minimum Operating Temperature

-55 °C

Series

IPW60R040C7

Forward Diode Voltage

0.9V

Height

21.1mm

The new 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series from Infineon offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. Efficiency and TCO (total cost of ownership) applications such as hyper data centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS ™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS ™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode