Infineon IRF7343PbF N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

Subtotal (1 reel of 4000 units)*

£1,364.00

(exc. VAT)

£1,636.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +£0.341£1,364.00

*price indicative

RS Stock No.:
170-2265
Mfr. Part No.:
IRF7343TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Series

IRF7343PbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Width

4mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Non Compliant

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant
Low RDS(on)
Dynamic dv/dt rating
Fast switching

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