N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRL3103 is the 30V single N-channel HEXFET power MOSFET in a TO-220AB package. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Dynamic dv/dt rating
175°C operating temperature
Fast switching
Fully avalanche rated
Lead-free

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.