Diodes Inc Dual N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4822SSD-13

Subtotal (1 reel of 2500 units)*

£570.00

(exc. VAT)

£685.00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
2500 +	£0.228	£570.00

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	31 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Maximum Power Dissipation	1.42 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-25 V, +25 V
	Length	4.95mm
	Number of Elements per Chip	2
	Width	3.95mm
	Typical Gate Charge @ Vgs	10.5 nC @ 10 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 31 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Maximum Power Dissipation 1.42 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -25 V, +25 V
	Length 4.95mm
	Number of Elements per Chip 2
	Width 3.95mm
	Typical Gate Charge @ Vgs 10.5 nC @ 10 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 1.5mm

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