STMicroelectronics MDmesh M2 N-Channel MOSFET, 3.5 A, 650 V, 3-Pin IPAK STU5N60M2
- RS Stock No.:
- 168-8073
- Mfr. Part No.:
- STU5N60M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 75 units)*
£69.225
(exc. VAT)
£83.10
(inc. VAT)
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.923 | £69.23 |
| 150 - 450 | £0.692 | £51.90 |
| 525 + | £0.587 | £44.03 |
*price indicative
- RS Stock No.:
- 168-8073
- Mfr. Part No.:
- STU5N60M2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | MDmesh M2 | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 2.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Height | 6.2mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M2 | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 2.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.5 nC @ 10 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Height 6.2mm | ||
- COO (Country of Origin):
- CN