Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S
- RS Stock No.:
- 168-7995
- Mfr. Part No.:
- TK72E12N1,S1X(S
- Brand:
- Toshiba
Save 5% when you buy 500 units
Subtotal (1 tube of 50 units)*
£83.65
(exc. VAT)
£100.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
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Units | Per unit | Per Tube* |
---|---|---|
50 - 200 | £1.673 | £83.65 |
250 - 450 | £1.629 | £81.45 |
500 + | £1.589 | £79.45 |
*price indicative
- RS Stock No.:
- 168-7995
- Mfr. Part No.:
- TK72E12N1,S1X(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 72 A | |
Maximum Drain Source Voltage | 120 V | |
Series | TK | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Maximum Power Dissipation | 225 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.16mm | |
Number of Elements per Chip | 1 | |
Width | 4.45mm | |
Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Height | 15.1mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 A | ||
Maximum Drain Source Voltage 120 V | ||
Series TK | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 225 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.16mm | ||
Number of Elements per Chip 1 | ||
Width 4.45mm | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 15.1mm | ||
- COO (Country of Origin):
- CN
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Related links
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