N-Channel MOSFET, 7 A, 650 V, 3-Pin D2PAK STMicroelectronics STB8N65M5

Subtotal (1 reel of 1000 units)*

£1,122.00

(exc. VAT)

£1,346.00

(inc. VAT)

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RS Stock No.:
168-7536
Mfr. Part No.:
STB8N65M5
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

10.75mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

10.4mm

Height

4.6mm

Series

MDmesh M5

N-channel MDmesh™ M5 Series, STMicroelectronics


The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


MOSFET Transistors, STMicroelectronics