N-Channel MOSFET, 7.2 A, 950 V, 3-Pin TO-220 STMicroelectronics STP7N95K3
- RS Stock No.:
- 168-7518
- Mfr. Part No.:
- STP7N95K3
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
£111.95
(exc. VAT)
£134.35
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.239 | £111.95 |
| 100 - 450 | £1.756 | £87.80 |
| 500 - 950 | £1.489 | £74.45 |
| 1000 - 4950 | £1.232 | £61.60 |
| 5000 + | £1.169 | £58.45 |
*price indicative
- RS Stock No.:
- 168-7518
- Mfr. Part No.:
- STP7N95K3
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.2 A | |
| Maximum Drain Source Voltage | 950 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.35 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | MDmesh K3, SuperMESH3 | |
| Height | 15.75mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.2 A | ||
Maximum Drain Source Voltage 950 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.35 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.4mm | ||
Minimum Operating Temperature -55 °C | ||
Series MDmesh K3, SuperMESH3 | ||
Height 15.75mm | ||