STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 900 V, 3-Pin TO-220FP STP3NK90ZFP
- RS Stock No.:
- 168-7510
- Mfr. Part No.:
- STP3NK90ZFP
- Brand:
- STMicroelectronics
Subtotal (1 tube of 50 units)*
£34.20
(exc. VAT)
£41.05
(inc. VAT)
FREE delivery for orders over £50.00
- 50 unit(s) shipping from 24 December 2025
- Plus 100 unit(s) shipping from 21 January 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.684 | £34.20 |
| 100 - 450 | £0.513 | £25.65 |
| 500 - 950 | £0.478 | £23.90 |
| 1000 - 4950 | £0.466 | £23.30 |
| 5000 + | £0.454 | £22.70 |
*price indicative
- RS Stock No.:
- 168-7510
- Mfr. Part No.:
- STP3NK90ZFP
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-220FP | |
| Series | MDmesh, SuperMESH | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 22.7 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.4mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-220FP | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 22.7 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 16.4mm | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
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