STMicroelectronics MDmesh K3, SuperMESH3 N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

Stock information currently inaccessible
RS Stock No.:
168-7037
Mfr. Part No.:
STU1HN60K3
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Series

MDmesh K3, SuperMESH3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

2.4mm

Number of Elements per Chip

1

Length

6.6mm

Transistor Material

Si

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

6.2mm

COO (Country of Origin):
MA

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy