STMicroelectronics MDmesh K3, SuperMESH3 N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

Unavailable
RS will no longer stock this product.
RS Stock No.:
168-7037
Mfr. Part No.:
STU1HN60K3
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Series

MDmesh K3, SuperMESH3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

2.4mm

Number of Elements per Chip

1

Length

6.6mm

Transistor Material

Si

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

6.2mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MA

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