STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-220FP STP10NK80ZFP
- RS Stock No.:
- 168-6692
- Mfr. Part No.:
- STP10NK80ZFP
- Brand:
- STMicroelectronics
Subtotal (1 tube of 50 units)*
£115.75
(exc. VAT)
£138.90
(inc. VAT)
FREE delivery for orders over £50.00
- 300 unit(s) ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.315 | £115.75 |
| 100 - 450 | £1.847 | £92.35 |
| 500 - 950 | £1.646 | £82.30 |
| 1000 - 4950 | £1.391 | £69.55 |
| 5000 + | £1.331 | £66.55 |
*price indicative
- RS Stock No.:
- 168-6692
- Mfr. Part No.:
- STP10NK80ZFP
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220FP | |
| Series | MDmesh, SuperMESH | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 900 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Length | 10.4mm | |
| Transistor Material | Si | |
| Height | 9.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220FP | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Length 10.4mm | ||
Transistor Material Si | ||
Height 9.3mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
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