Infineon DirectFET N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC IRF7946TRPBF
- RS Stock No.:
- 168-5976
- Mfr. Part No.:
- IRF7946TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4800 units)*
£3,753.60
(exc. VAT)
£4,502.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,998,400 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4800 + | £0.782 | £3,753.60 |
*price indicative
- RS Stock No.:
- 168-5976
- Mfr. Part No.:
- IRF7946TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 198 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | DirectFET | |
| Package Type | DirectFET ISOMETRIC | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 1.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 96 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 141 nC @ 20 V | |
| Width | 5.05mm | |
| Length | 6.35mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.53mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 198 A | ||
Maximum Drain Source Voltage 40 V | ||
Series DirectFET | ||
Package Type DirectFET ISOMETRIC | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 1.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 96 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 141 nC @ 20 V | ||
Width 5.05mm | ||
Length 6.35mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.53mm | ||
- COO (Country of Origin):
- CN
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon DirectFET N-Channel MOSFET 40 V DirectFET ISOMETRIC IRF7946TRPBF
- Infineon DirectFET N-Channel MOSFET 100 V DirectFET ISOMETRIC IRF6645TRPBF
- Infineon DirectFET 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V DirectFET ISOMETRIC AUIRL7736M2TR
- Infineon StrongIRFET Dual N-Channel MOSFET Transistor & Diode 40 V DirectFET ISOMETRIC IRF6613TRPBF
- Infineon DirectFET 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V DirectFET (L) IRL7472L1TRPBF
- Infineon HEXFET Silicon N-Channel MOSFET 20 V DirectFET ISOMETRIC IRF6620TRPBF