Infineon HEXFET N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRF100B202

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

97 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

221 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Length

10.67mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

16.51mm

Forward Diode Voltage

1.3V