N-Channel MOSFET, 3.7 A, 650 V, 3 + Tab-Pin SOT-223 Infineon IPN60R2K1CEATMA1

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Subtotal (1 reel of 3000 units)*

£612.00

(exc. VAT)

£735.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.204£612.00

*price indicative

RS Stock No.:
168-5930
Mfr. Part No.:
IPN60R2K1CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

650 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

2.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

5 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

3.7mm

Typical Gate Charge @ Vgs

6.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.7mm

Series

CoolMOS CE

Height

1.7mm

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
CN