N-Channel MOSFET, 10.1 A, 700 V, 3-Pin DPAK Infineon IPD65R650CEAUMA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
168-5915
Mfr. Part No.:
IPD65R650CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10.1 A

Maximum Drain Source Voltage

700 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

86 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

Height

2.41mm

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.