STMicroelectronics MDmesh DM2 N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK STB33N60DM2
- RS Stock No.:
- 168-5887
- Mfr. Part No.:
- STB33N60DM2
- Brand:
- STMicroelectronics
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 168-5887
- Mfr. Part No.:
- STB33N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Series | MDmesh DM2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 47 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.6V | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Series MDmesh DM2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 47 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.35mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.6V | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN