IXYS GigaMOS, HiperFET N-Channel MOSFET, 100 A, 300 V, 24-Pin SMPD MMIX1F160N30T

Stock information currently inaccessible
RS Stock No.:
168-4792
Mfr. Part No.:
MMIX1F160N30T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

300 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

25.25mm

Transistor Material

Si

Typical Gate Charge @ Vgs

376 nC @ 10 V

Width

23.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

5.7mm

COO (Country of Origin):
DE

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