IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 38 A, 1000 V Enhancement, 4-Pin SOT-227 IXFN44N100Q3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
168-4755
Mfr. Part No.:
IXFN44N100Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

1000V

Series

HiperFET, Q3-Class

Package Type

SOT-227

Mount Type

Screw

Pin Count

4

Maximum Drain Source Resistance Rds

220mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Number of Elements per Chip

1

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS