Name: onsemi PowerTrench Dual N/P-Channel MOSFET, 5.6 A, 9.3 A, 20 V, 30 V, 8-Pin SOIC FDS4501H
Brand: ON Semiconductor
SKU: 166-3210
Price: 0.12 GBP
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N, P
	Maximum Continuous Drain Current	5.6 A, 9.3 A
	Maximum Drain Source Voltage	20 V, 30 V
	Package Type	SOIC
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	29 mΩ, 80 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Common Drain
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	4.9mm
	Width	3.9mm
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	13 nC @ 4.5 V, 17 nC @ 4.5 V
	Height	1.575mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type N, P
	Maximum Continuous Drain Current 5.6 A, 9.3 A
	Maximum Drain Source Voltage 20 V, 30 V
	Package Type SOIC
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 29 mΩ, 80 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Common Drain
	Maximum Gate Source Voltage -20 V, +20 V
	Length 4.9mm
	Width 3.9mm
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 13 nC @ 4.5 V, 17 nC @ 4.5 V
	Height 1.575mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench Dual N/P-Channel MOSFET, 5.6 A, 9.3 A, 20 V, 30 V, 8-Pin SOIC FDS4501H

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