Dual P-Channel MOSFET, 2.9 A, 30 V, 8-Pin SOIC onsemi FDS9953A

Bulk discount available

Subtotal (1 reel of 2500 units)*

£745.00

(exc. VAT)

£895.00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
2500 - 2500	£0.298	£745.00
5000 +	£0.291	£727.50

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	P
	Maximum Continuous Drain Current	2.9 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	130 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-25 V, +25 V
	Length	5mm
	Transistor Material	Si
	Width	4mm
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	2.5 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Series	PowerTrench
	Height	1.5mm

	Select all
	Brand ON Semiconductor
	Channel Type P
	Maximum Continuous Drain Current 2.9 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 130 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -25 V, +25 V
	Length 5mm
	Transistor Material Si
	Width 4mm
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 2.5 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Series PowerTrench
	Height 1.5mm

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