N-Channel MOSFET, 4.9 A, 150 V, 8-Pin SOIC onsemi FDS2572

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	4.9 A
	Maximum Drain Source Voltage	150 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	47 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Length	5mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	29 nC @ 10 V
	Number of Elements per Chip	1
	Width	4mm
	Series	UltraFET
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 4.9 A
	Maximum Drain Source Voltage 150 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 47 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Length 5mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 29 nC @ 10 V
	Number of Elements per Chip 1
	Width 4mm
	Series UltraFET
	Height 1.5mm
	Minimum Operating Temperature -55 °C

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