N-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK onsemi FDB8832

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	30 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	3 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	11.33mm
	Length	10.67mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	204 nC @ 10 V
	Series	PowerTrench
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 30 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 3 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 11.33mm
	Length 10.67mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 204 nC @ 10 V
	Series PowerTrench
	Minimum Operating Temperature -55 °C
	Height 4.83mm

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