onsemi P-Channel MOSFET, 120 mA, 25 V, 3-Pin SOT-23 FDV302P

Subtotal (1 reel of 3000 units)*

£153.00

(exc. VAT)

£183.00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
3000 +	£0.051	£153.00

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	P
	Maximum Continuous Drain Current	120 mA
	Maximum Drain Source Voltage	25 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	10 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.65V
	Maximum Power Dissipation	350 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	+8 V
	Width	1.3mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	0.22 nC @ 4.5 V
	Length	2.92mm
	Minimum Operating Temperature	-55 °C
	Height	0.93mm

	Select all
	Brand ON Semiconductor
	Channel Type P
	Maximum Continuous Drain Current 120 mA
	Maximum Drain Source Voltage 25 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 10 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.65V
	Maximum Power Dissipation 350 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage +8 V
	Width 1.3mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 0.22 nC @ 4.5 V
	Length 2.92mm
	Minimum Operating Temperature -55 °C
	Height 0.93mm

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