P-Channel MOSFET, 670 mA, 200 V, 3 + Tab-Pin SOT-223 ON Semiconductor FQT3P20TF

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 670 mA
Maximum Drain Source Voltage 200 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 2.7 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 2.5 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 6 nC @ 10 V
Height 1.6mm
Series QFET
Maximum Operating Temperature +150 °C
Length 6.5mm
Transistor Material Si
Width 3.56mm
Minimum Operating Temperature -55 °C
8000 In stock for FREE next working day delivery
Price Each (On a Reel of 4000)
£ 0.144
(exc. VAT)
£ 0.173
(inc. VAT)
Units
Per unit
Per Reel*
4000 +
£0.144
£576.00
*price indicative
Related Products
Infineon's range of discrete HEXFET® power MOSFETs includes ...
Description:
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
BSP122,115 | N-Channel MOSFET, 550 mA, 200 V, ...
Description:
BSP122,115 | N-Channel MOSFET, 550 mA, 200 V, 4-Pin SOT-223 (SC-73) Nexperia BSP122,115
ON Semiconductors range of P-Channel MOSFETS are produced ...
Description:
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. • Voltage controlled P-Channel small signal switch• High-Density cell design • ...
Infineon's range of discrete HEXFET® power MOSFETs includes ...
Description:
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.