N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK Infineon IPB180N04S400ATMA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
166-1191
Mfr. Part No.:
IPB180N04S400ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

980 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

220 nC @ 10 V

Length

10mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

9.25mm

Height

4.4mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS T2

Forward Diode Voltage

1.3V

RoHS Status: Exempt

COO (Country of Origin):
MY
The Infineon OptiMOS has lowest switching and conduction power losses for highest thermal efficiency. It also has optimized total gate charge which enables smaller driver output stages.

AEC qualified

Green product

Ultra low Rds on

100 percent avalanche tested