N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L07ATMA3
- RS Stock No.:
- 166-1125
- Mfr. Part No.:
- IPB80N06S2L07ATMA3
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,006.00
(exc. VAT)
£1,207.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.006 | £1,006.00 |
*price indicative
- RS Stock No.:
- 166-1125
- Mfr. Part No.:
- IPB80N06S2L07ATMA3
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 210 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.31mm | |
| Width | 9.45mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 95 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 4.57mm | |
| Series | OptiMOS | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 210 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.31mm | ||
Width 9.45mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 95 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.3V | ||
Height 4.57mm | ||
Series OptiMOS | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY