N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L07ATMA3

Stock information currently inaccessible
RS Stock No.:
166-1125
Mfr. Part No.:
IPB80N06S2L07ATMA3
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.31mm

Width

9.45mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

95 nC @ 10 V

Transistor Material

Si

Series

OptiMOS

Forward Diode Voltage

1.3V

Height

4.57mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy