Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin IPAK IRLU120NPBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
166-1031
Mfr. Part No.:
IRLU120NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

20 nC @ 5 V

Length

6.6mm

Width

2.3mm

Minimum Operating Temperature

-55 °C

Height

6.1mm

COO (Country of Origin):
MX