Nexperia Dual N-Channel MOSFET, 800 mA, 20 V, 6-Pin SOT-666 PMDT290UNE,115
- RS Stock No.:
- 165-9828
- Mfr. Part No.:
- PMDT290UNE,115
- Brand:
- Nexperia
Subtotal (1 reel of 4000 units)*
£240.00
(exc. VAT)
£280.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.06 | £240.00 |
*price indicative
- RS Stock No.:
- 165-9828
- Mfr. Part No.:
- PMDT290UNE,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 800 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-666 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.95V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1.09 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 0.45 nC @ 4.5 V | |
| Width | 1.3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.6mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 800 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-666 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.95V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.09 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 0.45 nC @ 4.5 V | ||
Width 1.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.6mm | ||
- COO (Country of Origin):
- MY