P-Channel MOSFET, 10.4 A, 30 V, 6-Pin U-DFN2523 Diodes Inc DMP3017SFK-7
- RS Stock No.:
- 165-8418
- Mfr. Part No.:
- DMP3017SFK-7
- Brand:
- DiodesZetex
Subtotal (1 reel of 3000 units)*
£804.00
(exc. VAT)
£966.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.268 | £804.00 |
*price indicative
- RS Stock No.:
- 165-8418
- Mfr. Part No.:
- DMP3017SFK-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | U-DFN2523 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 17 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 42.7 nC @ 10 V | |
| Length | 2.55mm | |
| Transistor Material | Si | |
| Width | 2.35mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.58mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 10.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type U-DFN2523 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 17 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 42.7 nC @ 10 V | ||
Length 2.55mm | ||
Transistor Material Si | ||
Width 2.35mm | ||
Number of Elements per Chip 1 | ||
Height 0.58mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN