Name: Dual N-Channel MOSFET, 8.9 A, 20 V, 8-Pin SOIC Infineon IRF8915TRPBF
Brand: Infineon
SKU: 165-8279
Price: 0.16 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	8.9 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	27 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1.7V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Length	5mm
	Typical Gate Charge @ Vgs	4.9 nC @ 4.5 V
	Width	4mm
	Height	1.5mm
	Forward Diode Voltage	1V
	Minimum Operating Temperature	-55 °C
	Series	HEXFET

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 8.9 A
	Maximum Drain Source Voltage 20 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 27 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1.7V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Length 5mm
	Typical Gate Charge @ Vgs 4.9 nC @ 4.5 V
	Width 4mm
	Height 1.5mm
	Forward Diode Voltage 1V
	Minimum Operating Temperature -55 °C
	Series HEXFET

Dual N-Channel MOSFET, 8.9 A, 20 V, 8-Pin SOIC Infineon IRF8915TRPBF

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