Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 3-Pin D2PAK IRF630NSTRLPBF

Stock information currently inaccessible
RS Stock No.:
165-8186
Mfr. Part No.:
IRF630NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.3 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

82 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Width

11.3mm

Length

10.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

4.83mm

COO (Country of Origin):
CN

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