P-Channel MOSFET, 3.4 A, 60 V, 8-Pin SOIC Infineon BSO613SPVGHUMA1
- RS Stock No.:
- 165-8063
- Mfr. Part No.:
- BSO613SPVGHUMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 165-8063
- Mfr. Part No.:
- BSO613SPVGHUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.4 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 20 nC | |
| Forward Diode Voltage | 1.16V | |
| Minimum Operating Temperature | -55 °C | |
| Series | SIPMOS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 20 nC | ||
Forward Diode Voltage 1.16V | ||
Minimum Operating Temperature -55 °C | ||
Series SIPMOS | ||
- COO (Country of Origin):
- CN