N-Channel MOSFET, 86 A, 30 V, 3-Pin DPAK Infineon IRLR8726PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Length

6.73mm

Transistor Material

Si

Number of Elements per Chip

1

Width

7.49mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Series

HEXFET