N-Channel MOSFET, 16.5 A, 25 V, 8-Pin SOIC Vishay SI4666DY-T1-GE3

Subtotal (1 reel of 2500 units)*

£225.00

(exc. VAT)

£275.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.09£225.00

*price indicative

RS Stock No.:
165-7257
Mfr. Part No.:
SI4666DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16.5 A

Maximum Drain Source Voltage

25 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

22.4 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Height

1.55mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN