N-Channel MOSFET, 9 A, 550 V, 3-Pin DPAK Infineon IPD50R399CPBTMA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
165-6885
Mfr. Part No.:
IPD50R399CPBTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

17 nC @ 10 V

Length

6.73mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.223mm

Height

2.413mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS CP

RoHS Status: Exempt

COO (Country of Origin):
CN