Name: Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin TDSON Infineon IPG20N04S412ATMA1
Brand: Infineon
SKU: 165-6877
Price: 0.50 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	40 V
	Package Type	TDSON
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	12.2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	41 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	2
	Width	6.15mm
	Typical Gate Charge @ Vgs	14 nC @ 10 V
	Length	5.15mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Series	OptiMOS T2
	Height	1mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 40 V
	Package Type TDSON
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 12.2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 41 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 2
	Width 6.15mm
	Typical Gate Charge @ Vgs 14 nC @ 10 V
	Length 5.15mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Series OptiMOS T2
	Height 1mm

RoHS Status: Exempt

COO (Country of Origin):: CN

Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin TDSON Infineon IPG20N04S412ATMA1

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