N-Channel MOSFET, 9 A, 400 V, 3-Pin D2PAK STMicroelectronics STB11NK40ZT4
- RS Stock No.:
- 165-6846
- Mfr. Part No.:
- STB11NK40ZT4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 1000 units)*
£897.00
(exc. VAT)
£1,076.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | £0.897 | £897.00 |
| 5000 + | £0.845 | £845.00 |
*price indicative
- RS Stock No.:
- 165-6846
- Mfr. Part No.:
- STB11NK40ZT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 550 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.75mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | MDmesh, SuperMESH | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 400 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 550 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 10.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.75mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Series MDmesh, SuperMESH | ||