Dual N-Channel MOSFET, 20 A, 30 V, 8-Pin TDSON Infineon BSC150N03LDGATMA1
- RS Stock No.:
- 165-6686
- Mfr. Part No.:
- BSC150N03LDGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£1,200.00
(exc. VAT)
£1,450.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.24 | £1,200.00 |
*price indicative
- RS Stock No.:
- 165-6686
- Mfr. Part No.:
- BSC150N03LDGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 22 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 26 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Width | 5.9mm | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Length | 5.15mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Series | OptiMOS 3 | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 26 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Width 5.9mm | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Length 5.15mm | ||
Transistor Material Si | ||
Height 1mm | ||
Series OptiMOS 3 | ||
Minimum Operating Temperature -55 °C | ||