STMicroelectronics MDmesh K3, SuperMESH3 N-Channel MOSFET, 1.2 A, 600 V, 3-Pin DPAK STD1HN60K3

Stock information currently inaccessible
RS Stock No.:
165-6580
Mfr. Part No.:
STD1HN60K3
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

MDmesh K3, SuperMESH3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Length

6.6mm

Height

2.4mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy