Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23
- RS Stock No.:
- 165-6450P
- Mfr. Part No.:
- DN3135K1-G
- Brand:
- Microchip
Subtotal 25 units (supplied on a continuous strip)*
£7.575
(exc. VAT)
£9.10
(inc. VAT)
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Last RS stock
- Final 10,575 unit(s), ready to ship
Units | Per unit |
|---|---|
| 25 + | £0.303 |
*price indicative
- RS Stock No.:
- 165-6450P
- Mfr. Part No.:
- DN3135K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 135mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Series | DN3135 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 135mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Series DN3135 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an Advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage